Electronic Devices and Circuits I

Study of Electronic Materials and ComponentsClassification of materials based on bandgaps; Types of resistors-fixed, variable and precision etc. like carbon film, metal film, wire wound, cermets, Their standard values specifications and applications, Classification of capacitors based on dielectrics, Standard values, Specifications and applications of capacitors, Types of capacitors-electrolytic, ceramic, paper, mica, tantalum, plastic film etc. Study of different core materials depending on rage of frequencies for inductors and transformers; semiconductor materials, Si, Ge, AIII – BV compounds their properties.Semiconductor PhysicsElectrical properties of Ge and Si materials like intrinsic concentration, mobility, conductivity, energy gap, etc. Law of mass action, Generation and recombination of free charges (Holes/electrons). Diffusion phenomenon, Concentration gradient, Einstein relationship, Volt equivalent of temperature, Total current (drift and diffusion) potential variation within continuous and step graded semiconductor, i.e. p-n junction.Semiconductor Diode CharacteristicsCurrent components in forward biased / reverse biased p-n junction diode; cut-in voltage, Reverse saturation current, Derivation of V/I characteristics (logarithmic) equation of diode, Temperature dependence of diode characteristics, Concepts and significance of expressions of transition and diffusion capacitance, Junction diode switching times.Semiconductor Diode as Circuit Elementp-n junction as rectifier, Half-wave, Full-wave and bridge rectifier with and without capacitor filter, Other types of filters-choke input and L section filters, Parameters like ripple factor, Efficiency, TUF, PIV, IFmax, Isurage, etc. Derivations of ripple factor for L, C and L section filter, Bleeder resistor, Calculations for bridge rectifier with C filter for specified load voltage / current and ripple. Diode as a waveshaping element in clipping and clamping circuits, Voltage multipliers.BJT-Characteristic